Exceptional GaN material development and production

Get proven advantages for the growth of advanced GaN-based devices, including UV LEDs, blue spectrum lasers and FETs -- and meet the challenges of Al-containing compounds -- with the Veeco Discovery D180 GaN. It's ideally suited to provide fast growth rates for quality GaN deposition and provides stable growth chamber conditions from run-to-run with minimal build-up of deposits above wafers. The D180 GaN optimizes repeatability with integrated RealTemp® 200 in-situ wafer temperature measurement.

TurboDisc Discovery D180 GaN MOCVD System

* Specially-developed configurations for growth chamber and integrated Flow Flange® for precise control and excellent repeatability
* Integrated vacuum loadlock eliminates the need to bring the reactor to atmosphere between runs, enhancing clean, efficient operation
* TurboDisc® reactor engineered for high efficiency and superior quality AlGaN deposition at fast growth rates
* Exceptional uniformity of thickness, doping, and composition in grown epitaxial layers.
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